发明名称 RECESSED TERMINATION STRUCTURES AND METHODS OF FABRICATING ELECTRONIC DEVICES INCLUDING RECESSED TERMINATION STRUCTURES
摘要 An electronic device includes a drift region, a Schottky contact on a surface of the drift region, and an edge termination structure in the drift region adjacent the Schottky contact. The edge termination structure includes a recessed region that is recessed from the surface of the drift region by a distance d that may be about 0.5 microns.
申请公布号 US2012256192(A1) 申请公布日期 2012.10.11
申请号 US201113080126 申请日期 2011.04.05
申请人 ZHANG QINGCHUN;HENNING JASON 发明人 ZHANG QINGCHUN;HENNING JASON
分类号 H01L29/872;H01L21/329;H01L29/812 主分类号 H01L29/872
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