发明名称 |
RECESSED TERMINATION STRUCTURES AND METHODS OF FABRICATING ELECTRONIC DEVICES INCLUDING RECESSED TERMINATION STRUCTURES |
摘要 |
An electronic device includes a drift region, a Schottky contact on a surface of the drift region, and an edge termination structure in the drift region adjacent the Schottky contact. The edge termination structure includes a recessed region that is recessed from the surface of the drift region by a distance d that may be about 0.5 microns.
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申请公布号 |
US2012256192(A1) |
申请公布日期 |
2012.10.11 |
申请号 |
US201113080126 |
申请日期 |
2011.04.05 |
申请人 |
ZHANG QINGCHUN;HENNING JASON |
发明人 |
ZHANG QINGCHUN;HENNING JASON |
分类号 |
H01L29/872;H01L21/329;H01L29/812 |
主分类号 |
H01L29/872 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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