发明名称 |
Layouts of POLY Cut Openings Overlapping Active Regions |
摘要 |
A method of forming integrated circuits includes forming a mask layer over a gate electrode line, wherein the gate electrode line is over a well region of a semiconductor substrate; forming an opening in the mask layer, wherein a portion of the gate electrode line and a well pickup region of the well region are exposed through the opening; and removing the portion of the gate electrode line through the opening.
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申请公布号 |
US2012258592(A1) |
申请公布日期 |
2012.10.11 |
申请号 |
US201113081115 |
申请日期 |
2011.04.06 |
申请人 |
CHEN JUNG-HSUAN;CHEN YEN-HUEI;TIEN LI-CHUN;LIAO HUNG-JEN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHEN JUNG-HSUAN;CHEN YEN-HUEI;TIEN LI-CHUN;LIAO HUNG-JEN |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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