发明名称 Layouts of POLY Cut Openings Overlapping Active Regions
摘要 A method of forming integrated circuits includes forming a mask layer over a gate electrode line, wherein the gate electrode line is over a well region of a semiconductor substrate; forming an opening in the mask layer, wherein a portion of the gate electrode line and a well pickup region of the well region are exposed through the opening; and removing the portion of the gate electrode line through the opening.
申请公布号 US2012258592(A1) 申请公布日期 2012.10.11
申请号 US201113081115 申请日期 2011.04.06
申请人 CHEN JUNG-HSUAN;CHEN YEN-HUEI;TIEN LI-CHUN;LIAO HUNG-JEN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 CHEN JUNG-HSUAN;CHEN YEN-HUEI;TIEN LI-CHUN;LIAO HUNG-JEN
分类号 H01L21/28 主分类号 H01L21/28
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