| 摘要 |
<p>The invention relates to a method of manufacturing a p-type electrode comprising the steps of: preparing an N-type base semiconductor substrate comprising an n-base layer, a p-type emitter on the n-base layer, a first passivation layer on the p-type emitter, and a second passivation layer on the n-base layer; applying a conductive paste onto the first passivation layer, wherein the conductive paste comprises (i) 100 parts by weight of a conductive powder comprising a metal selected from the group consisting of silver, nickel, copper and a mixture thereof, (ii) 0.3 to 8 parts by weight of aluminum powder with particle diameter of 3 to 11 ?m, (iii) 3 to 22 parts by weight of a glass frit, and (iv) an organic medium; and firing the conductive paste.</p> |
