发明名称 METHOD FOR MANUFACTURING ELECTRONIC COMPONENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for manufacturing an electronic component capable of suppressing deterioration of insulation resistance caused by Ag migration and effectively manufacturing a highly reliable electronic component when manufacturing the electronic component having an external electrode including an Ag electrode, and Ni plating film and Au plating film for covering the Ag electrode. <P>SOLUTION: The Ni plating film is formed on the surface of the external electrode body consisting of a material including Ag as a main component. Then, after the Au plating film is formed on the surface of the Ni plating film, etching is performed by using an etching liquid which selectively dissolves Ag. As the etching liquid, an etching liquid containing at least one substance selected from a group consisting of an iron (III) salt, hydrogen peroxide, and ammonium peroxodisulfate is used. Furthermore, an etching liquid containing iron (III) ammonium sulfate is used as the etching liquid. The etching liquid used has a pH value of 1.0 or more. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012193427(A) 申请公布日期 2012.10.11
申请号 JP20110059109 申请日期 2011.03.17
申请人 MURATA MFG CO LTD 发明人 INOUE MITSUNORI
分类号 C23F1/30;C23F1/44;H01G4/12;H01G4/30 主分类号 C23F1/30
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