发明名称 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus with reduced atmosphere opening time and improved throughput. <P>SOLUTION: A substrate processing apparatus 1 comprises: a chamber 11; a stage 12 which is arranged in the chamber and on which a substrate 2 is plated; gas supply means 13 for introducing a prescribed gas into the chamber through a gas supply line 13a; a pressure sensor 15 which detects a pressure P<SB POS="POST">1</SB>in the chamber; and control means 16 for controlling an introduction pressure P<SB POS="POST">2</SB>of the gas. When the gas supply means introduces the prescribed gas into the chamber with the introduction pressure P<SB POS="POST">2</SB>to return a pressure in a load lock chamber to an atmospheric pressure (atmosphere opening) from a vacuum state, the pressure sensor detects the pressure P<SB POS="POST">1</SB>in the chamber and the control means controls the introduction pressure P<SB POS="POST">2</SB>for the pressure P<SB POS="POST">1</SB>so that the difference between the P<SB POS="POST">2</SB>and the P<SB POS="POST">1</SB>substantially becomes constant. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012195499(A) 申请公布日期 2012.10.11
申请号 JP20110059346 申请日期 2011.03.17
申请人 ULVAC JAPAN LTD 发明人 FUJII YOSHIJI
分类号 H01L21/677;H01L21/205;H01L21/3065 主分类号 H01L21/677
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