| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an ion beam parallelizing device which can parallelize ion beams in a short distance. <P>SOLUTION: The beam parallelizing device comprises a first base layer, a first conductive layer formed on top of the fist base layer, a first substrate 50a having a plurality of first open holes penetrating these layers, a second base layer, a second conductive layer formed on top of the second base layer, and a second substrate 50b having a plurality of second open holes penetrating these layers formed so as to correspond to the plurality of first open holes. The plurality of first open holes and second open holes respectively have electrical insulation properties on their wall surface parts inside the base layers. The first and second substrate 50a, 50b have the first and second conductive layers facing in the same direction and have the plurality of first open holes disposed so as to face the corresponding second open holes. <P>COPYRIGHT: (C)2013,JPO&INPIT |
