| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of forming a titanium nitride film, an apparatus for forming a titanium nitride film, and a program, which are capable of preventing a substrate film from being etched. <P>SOLUTION: In the method of forming a titanium nitride film, first, an inside of a reaction tube 2 accommodating a semiconductor wafer W is heated up to 200-350°C by using a temperature rising heater 7. Then, a titanium nitride film is formed on the semiconductor wafer W by supplying film forming gas including a titanium raw material into the reaction tube 2. Methylcyclopentadienyl tris(dimethylamino)titanium that does not include a chlorine atom and includes titanium is used as the titanium raw material. <P>COPYRIGHT: (C)2013,JPO&INPIT |
