| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for precisely detecting both of defects due to a machining degradation layer and defects characteristic to a crystal of a ZnO-based compound semiconductor crystal. <P>SOLUTION: The method includes: a step of etching the surface of the ZnO-based compound crystal using hydrofluoric acid (HF); and a detecting step of detecting etch pits formed on the surface of the ZnO-based compound crystal. The detecting step includes: a determining step of determining that each of the etch pits is a cone-shaped pit or a truncated cone-shaped pit; and a step of calculating the etch pit density of the truncated cone-shaped pits. <P>COPYRIGHT: (C)2013,JPO&INPIT |
