| 摘要 |
A processing system for detecting in-situ arcing events during substrate processing is provided. The processing systems includes at least a plasma processing chamber having a probe arrangement, wherein said probe arrangement is disposed on a surface of said processing chamber and is configured to measure at least one plasma processing parameter. The probe arrangement includes a plasma-facing sensor and a measuring capacitor, wherein the plasma-facing sensor is coupled to a first plate of the measuring capacitor. The probe arrangement also includes a detection arrangement that is coupled to a second plate of the measuring capacitor, wherein the detection arrangement is configured for converting an induced current flowing through the measuring capacitor into a set of digital signals, which is processed to detect the in-situ arcing events. |
