PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

摘要

PURPOSE: A plasma processing apparatus supplying high frequency power and a plasma processing method are provided to apply a voltage to high frequency power and a sample which generates plasma by providing intermittent high frequency power which is controllable in a wide repetition frequency band with high precision. CONSTITUTION: A shower plate(102) and a dielectric window(103) for introducing etching gas in a vacuum container(101) is formed on the top of the vacuum container having an opened top portion. A gas supply device(105) letting the etching gas flow is connected to the shower plate. A vacuum evacuator(106) is connected to the vacuum container passing through an on off valve(117) for ventilation and an exhaust rate variable valve(118). A process chamber(104) becomes a vacuum state by driving the vacuum evacuator. Pressure in the process chamber is adjusted to desired pressure by the exhaust rate variable valve. A sampling electrode(111) is installed in a lower part of the vacuum container facing the shower plate. [Reference numerals] (105) Gas supply device; (113) Matching circuit; (114) High frequency bias power; (115) High frequency filter; (116) DC; (120) Control part