METHODS OF FORMING BONDED SEMICONDUCTOR STRUCTURES INCLUDING TWO OR MORE PROCESSED SEMICONDUCTOR STRUCTURES CARRIED BY A COMMON SUBSTRATE, AND SEMICONDUCTOR STRUCTURES FORMED BY SUCH METHODS

摘要

PURPOSE: A method for forming a bonded semiconductor structure including two or more processed semiconductor structures supported by a common substrate and the semiconductor structure formed thereby are provided to form s tight contact area between two surfaces by reducing surface roughness to an atomic scale value by polishing bonding surfaces. CONSTITUTION: A semiconductor material layer(104) includes single crystalline silicon, germanium, or III-V semiconductor materials. The semiconductor material layer includes an epitaxial layer consisting of the semiconductor material. The semiconductor material layer is formed on a base(106). The base is formed into a multilayer structure of including two or more different materials. The semiconductor material layer is bonded to an electric insulating material layer(105) at temperature of about 400°C or less.