| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a low-power consumption, small-area nonvolatile configuration memory. <P>SOLUTION: A nonvolatile configuration memory in an embodiment comprises: a transistor M11 having a gate connected to an output node D12, a source to which a first voltage is applied, and a drain connected to an output node D11; a transistor M12 having a gate connected to the output node D11, a source to which the first voltage is applied, and a drain connected to the output node D12; a transistor F11 having a control gate connected to a word line WL11, a source to which a second voltage lower than the first voltage is applied, a drain connected to the output node D11, a storage layer which stores data in a nonvolatile manner, and a threshold value being changed according to the data; and a transistor F12 having a control gate connected to a word line WL12, a source to which the second voltage is applied, a drain connected to the output node D12, a storage layer which stores data in a nonvolatile manner, and a threshold value being changed according to the data. <P>COPYRIGHT: (C)2013,JPO&INPIT |
