FILM FORMATION METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a technology for enabling formation of an excellent film on a substrate surface by transferring a polysilazane film formed on a support.

SOLUTION: A coating liquid P containing a polysilazane material is coated on a surface of a sheet film F and a polysilazane thin film R is obtained by causing a solvent to vaporize. Prior to transfer to a semiconductor substrate, UV light L of uniform strength is irradiated from a UV light source 202 via a diffuser 203 on a thin film R. Accordingly, viscosity of a surface Ra of the thin film R is selectively increased and when performing substrate transfer, an air gap can be formed without filling trenches formed on a substrate surface.

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