发明名称 WORD LINE POTENTIAL CONTROL CIRCUIT
摘要 <P>PROBLEM TO BE SOLVED: To adjust a word line potential according to manufacturing variations, an operating temperature, and the like. <P>SOLUTION: In a memory cell array 1 in which a plurality of memory cells MC are arranged in an array, a specific characteristic of the memory cells MC is controlled, and potentials of word lines wl_0 to wl_m are adjusted on the basis of a distribution of characteristics when the specific characteristic of the memory cells MC is controlled. Data is read out from all the memory cells MC of the memory cell array 1 via a read/write circuit 7. Then, on a counter 8, the number of inversions of the data read out from the memory cells MC is counted and output to a comparator 11. Moreover, on a selector 10, an expectation N2 is selected and output to the comparator 11. Then, on the comparator 11, the number of the inversions of the data read out from the memory cells MC is compared with the expectation N2, and a comparison result is transmitted to a source potential control unit 13. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012195037(A) 申请公布日期 2012.10.11
申请号 JP20110059262 申请日期 2011.03.17
申请人 TOSHIBA CORP 发明人 SHIZUNO KAYAKO;HIRABAYASHI OSAMU
分类号 G11C29/50;G11C11/413 主分类号 G11C29/50
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