| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor device allowing constant current operation. <P>SOLUTION: A nitride semiconductor device 111 comprises: a semiconductor layer 30 containing a nitride semiconductor; a source electrode 40; a drain electrode 50; a first gate electrode 10; and a second gate electrode 20. The source electrode 40 and the drain electrode 50 are provided on a main surface of the semiconductor layer, form an ohmic contact to the semiconductor layer, and are spaced apart from each other. The first gate electrode 10 is provided between the source electrode 40 and the drain electrode 50 on the main surface. The second gate electrode 20 is provided between the source electrode 40 and the first gate electrode 10 on the main surface. When the potential difference between the source electrode 40 and the first gate electrode 10 is 0 V, the portion of the semiconductor layer 30 opposite to the first gate electrode is conducted. The first gate electrode 10 switches the constant current in response to the voltage applied to the second gate electrode 20. <P>COPYRIGHT: (C)2013,JPO&INPIT |
