发明名称 PROCESS FOR PRODUCING RADIATION DETECTOR, AND RADIATION DETECTOR
摘要 <p>A graphite substrate (11) is housed inside a chamber (31) which is evacuated by a pump (P). Impurities in carbon are then evaporated by heating the carbon in a vacuum, purifying the carbon. By purifying the carbon in the graphite substrate (11), it is possible to limit the content in the graphite substrate (11) of semiconductor layer donor/acceptor elements and also metal element impurities included in the carbon, to no more than 0.1 ppm. As a result, it is possible to suppress production of leak currents and abnormal leak points, and to suppress abnormal growth of crystals in the semiconductor layer.</p>
申请公布号 WO2012137429(A1) 申请公布日期 2012.10.11
申请号 WO2012JP01894 申请日期 2012.03.19
申请人 SHIMADZU CORPORATION;KAINO, MASATOMO;TOKUDA, SATOSHI;YOSHIMUTA, TOSHINORI;KISHIHARA, HIROYUKI;YOSHIMATSU, AKINA;SATO, TOSHIYUKI;KUWABARA, SHOJI 发明人 KAINO, MASATOMO;TOKUDA, SATOSHI;YOSHIMUTA, TOSHINORI;KISHIHARA, HIROYUKI;YOSHIMATSU, AKINA;SATO, TOSHIYUKI;KUWABARA, SHOJI
分类号 G01T1/24;H01L27/14;H01L27/146;H01L31/09 主分类号 G01T1/24
代理机构 代理人
主权项
地址
您可能感兴趣的专利