摘要 |
<p>A graphite substrate (11) is housed inside a chamber (31) which is evacuated by a pump (P). Impurities in carbon are then evaporated by heating the carbon in a vacuum, purifying the carbon. By purifying the carbon in the graphite substrate (11), it is possible to limit the content in the graphite substrate (11) of semiconductor layer donor/acceptor elements and also metal element impurities included in the carbon, to no more than 0.1 ppm. As a result, it is possible to suppress production of leak currents and abnormal leak points, and to suppress abnormal growth of crystals in the semiconductor layer.</p> |
申请人 |
SHIMADZU CORPORATION;KAINO, MASATOMO;TOKUDA, SATOSHI;YOSHIMUTA, TOSHINORI;KISHIHARA, HIROYUKI;YOSHIMATSU, AKINA;SATO, TOSHIYUKI;KUWABARA, SHOJI |
发明人 |
KAINO, MASATOMO;TOKUDA, SATOSHI;YOSHIMUTA, TOSHINORI;KISHIHARA, HIROYUKI;YOSHIMATSU, AKINA;SATO, TOSHIYUKI;KUWABARA, SHOJI |