| 摘要 |
PURPOSE: A cleaning method and a film depositing method are provided to prevent the carbonization of polyimide by heating a deposition container at 360°C to 540 deg;C in the state creating oxygen atmosphere. CONSTITUTION: A first source gas and a second source gas are provided within a deposition container. The first source gas is comprised of acid anhydride. The second source gas is comprised of diamine. Oxygen atmosphere is created within the deposition container(S12). The deposition container is heated at 360°C to 540 deg;C in the state of the oxygen atmosphere(S13). Polyimide is eliminated by oxidizing the polyimide remaining within the deposition container(S18). [Reference numerals] (AA) Start; (BB) Treatment process; (CC) End; (S11) Carrying a wafer in a deposition container(carry-in process); (S12) Decompressing the inner side of the deposition container(decompression process); (S13) Raising the temperature of the wafer to a deposition temperature(recovery process); (S14) Forming a polyimide film(film forming process); (S15) Purging the inner side of the deposition container(purge process); (S16) Restoring the pressure of the inner side of the deposition container to atmospheric pressure(pressure restoration process); (S17) Carrying out the wafer from the deposition container(carry-out process); (S18) Oxidizing and removing polyimide remaining in the deposition container
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