SEMICONDUCTOR DEVICE AND ELECTRONIC APPLIANCE

摘要

PROBLEM TO BE SOLVED: To manufacture a semiconductor device including an oxide semiconductor with high productivity and at low cost by reducing the number of exposure masks to simplify a photolithography process.

SOLUTION: A manufacturing method for a semiconductor device including a channel-etched inverted-staggered thin film transistor includes a process of etching an oxide semiconductor film and a conductive film with a mask layer formed using a multi-gradation mask, which is an exposure mask allowing transmitted light to have a plurality of intensities. In the etching process, a first etching process employs dry etching in which etching gas is used and a second etching process employs wet etching in which etching liquid is used.

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