发明名称 HEAT TREATMENT APPARATUS OF SUBSTRATE
摘要 <P>PROBLEM TO BE SOLVED: To provide a heat treatment apparatus of a substrate which can cool the substrate after heat treatment and is inexpensive with a simple structure. <P>SOLUTION: When a pair of wafer transfer arms 20, 20 are elevated up to an upper position while still in a retreating position after completion of heat treatment of a wafer W, the wafer transfer arms 20, 20 push up the lower surface of a soaking ring 10 supporting the wafer W. As a result thereof, the wafer W is elevated to the position close to an upper furnace wall 80a by within 3 mm in a heat treatment furnace 80 and quickly cooled by heat transfer or the like due to opposition to the upper furnace wall 80a in a low-temperature state. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012195342(A) 申请公布日期 2012.10.11
申请号 JP20110056374 申请日期 2011.03.15
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 YOKOUCHI KENICHI
分类号 H01L21/26;H01L21/324;H01L21/683 主分类号 H01L21/26
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