DISPLAY DEVICE THIN FILM SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

摘要

A display device thin film semiconductor device (10) according to the present invention comprises: a substrate (1); a gate electrode (2) formed upon the substrate; a gate insulator film (3) formed upon the gate electrode; a channel layer (4), having a protrusion shape formed on the surface thereof, and which is formed upon the gate insulator film; a channel protection layer (5), further comprising an organic material which includes silicon, oxygen, and carbon, and which is formed upon the protrusion shape of the channel layer; an interface layer (6), including carbon as a primary constituent thereof, which is formed on the interface between the upper face of the protrusion shape of the channel layer and the channel protection layer, and wherein the carbon which is the primary constituent thereof is carbon which originates in the organic material; and a source electrode (8s) and a drain electrode (8d), which are formed along the upper part and the lateral parts of the end parts of the channel protection layer, the lateral parts of the interface layer which range along the lateral parts of the channel protection layer, the lateral parts of the protrusion shape of the channel layer which range along the lateral parts of the interface layer, and the upper part of the channel layer which ranges along the lateral parts of the protrusion shape of the channel layer.