<p>PURPOSE: A memory device is provided to reduce an occupied area of a memory cell by forming a cell transistor using a sidewall portion of a groove portion formed in an insulating layer. CONSTITUTION: A bit line(120a) is formed on a substrate(100). A first insulation layer(210) is formed on the bit line. A contact plug(170) is electrically connected to the bit line. A second insulation layer(220) has a groove portion formed on the first insulation layer. An electrode(130) is formed on an upper side of the second insulation layer.</p>
