SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a technology for reducing parasitic capacitance occurring between circuit elements and conductive lines disposed on a front side of a substrate, and electronic circuits disposed on a reverse side of the substrate, in a semiconductor device.

SOLUTION: A semiconductor device comprises: a substrate; a pixel array disposed on the substrate; a first conductive pad disposed on the substrate and electrically connected with circuit elements of the pixel arrays; a second conductive pad disposed under the substrate for connecting the electronic circuits; an insulation layer disposed between the substrate and the first conductive pad; a third conductive pad disposed between the substrate and the insulation layer; a first conductive member connecting the first conductive pad with the third conductive pad through a first contact hole penetrating the insulation layer; and a second conductive member connecting the second conductive pad with the third conductive pad through a second contact hole penetrating the substrate.

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