COMPOSITE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To achieve a composite semiconductor device which includes a plurality of semiconductor elements having withstanding voltages different from one another on one pellet; which can achieve space saving of circuits; and which can be manufactured in a simple manufacturing process.

SOLUTION: A first semiconductor element is formed on a surface of a drift region 6 and has a first semiconductor region 8. A second semiconductor element is distanced from the first semiconductor region 8 via an isolation region and has a second semiconductor region 10 formed on a surface of the drift region 6. By doping of an impurity of the first conductivity type and an impurity of the second conductivity type into the second semiconductor region 10, a profile of impurities in the drift region 6 has mountain-shaped concentration distribution in which concentration is higher at the surface on the second semiconductor region 10 side.

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