| 摘要 |
<P>PROBLEM TO BE SOLVED: To reliably prevent occurrence of voids in micro wiring. <P>SOLUTION: A semiconductor manufacturing method comprises the steps of: forming a seed film containing a first metal on a bottom face and a lateral wall of an opening 12 formed in interlayer insulation films 102 and 203 and a field portion on the interlayer insulation film 103 other than the opening 12; forming a resist on the seed film to fill the opening 12 with the resist; subsequently, removing a part of the resist while leaving the resist on the seed film formed on the bottom face of the opening 12 to expose the seed film formed from upper part of the lateral walls 202A and 202B of the opening 12 across the field portion 203; forming a cover film containing a second metal having resistance higher than that of the first metal on the seed film located on the upper part of the lateral walls of the opening 12 and the field portion 203; subsequently, removing the resist to expose the seed film; and forming a plating film containing the first metal on the exposed seed film. <P>COPYRIGHT: (C)2013,JPO&INPIT |
