| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device suitable for, for example, improving the characteristics of a memory cell and to provide a method of manufacturing the nonvolatile semiconductor memory device. <P>SOLUTION: A nonvolatile semiconductor memory device comprises first lines, second lines, and memory cells. The second lines cross the first lines. The memory cells are arranged at the positions where the first lines and the second lines cross. Each of the memory cells has a resistance change layer, an upper electrode layer, a lower electrode layer, a diode layer, a first oxide film, and a second oxide film. The upper electrode layer is disposed above the resistance change layer. The lower electrode layer is disposed under the resistance change layer. The diode layer is disposed above the upper electrode layer or under the lower electrode layer. The first oxide film covers the side surfaces of at least one of the upper electrode layer and the lower electrode layer. The second oxide film covers the side surfaces of the diode layer. The first oxide film is thicker than the second oxide film. <P>COPYRIGHT: (C)2013,JPO&INPIT |
