SEMICONDUCTOR DEVICE AND DISPLAY DEVICE

摘要

This semiconductor device (100) has a diode element (10). The diode element (10) has a first electrode (3) formed from a conductive film that is the same as a gate electrode for a thin-film transistor, an oxide semiconductor layer (5), a second electrode (6) that is formed from a conductive film that is the same as a source electrode for a thin-film transistor and is in contact with the oxide semiconductor layer (5), and a third electrode (7). The oxide semiconductor layer (5) has offset regions (19) between the first electrode (3) and second electrode (6) and between the first electrode (3) and the third electrode (7), respectively.