| 摘要 |
<p>Disclosed is an etching gas provided containing CHF 2 COF. The etching gas may contain, as an additive, at least one kind of gas selected from O 2 , O 3 , CO, CO 2 , F 2 , NF 3 , Cl 2 , Br 2 , I 2 , XF n (In this formula, X represents Cl, I or Br. n represents an integer satisfying 1‰¤n‰¤7.), CH 4 , CH 3 F, CH 2 F 2 , CHF 3 , N 2 , He, Ar, Ne, Kr and the like, from CH 4 , C 2 H 2 ,C 2 H 4 ,C 2 H 6 , C 3 H 4 , C 3 H 6 , C 3 H 8 , HI, HBr, HCl, CO, NO, NH 3 , H 2 and the like, or from CH 4 , CH 3 F, CH 2 F 2 and CHF 3 . This etching gas is not only excellent in etching performances such as the selection ratio to a resist and the patterning profile but also easily available and does not substantially by-produce CF 4 that places a burden on the environment.</p> |
