| 摘要 |
A method for manufacturing an LED(Light Emitting Diode) is provided to remove a GaN thin film and a substrate while protecting a GaN semiconductor layer from thermal impact during the projection of laser in LLO(Laser Lift-Off) process, by blocking the laser frequency with a mask. A method for manufacturing an LED(Light Emitting Diode) comprises the steps of: forming a mask on a substrate(300), and selectively etching the substrate; growing a nitride semiconductor layer on the selectively etched substrate; and removing the substrate and a mask(310) by LLO(Laser Lift-Off) process. |
