发明名称 |
CLEANING COMPOSITION FOR PHOTOLITHOGRAPHY |
摘要 |
PURPOSE: A washing liquid composition for photo-lithography is provided to cure the surface of patterns and to increase the etching resistance of the composition. CONSTITUTION: A washing liquid composition for photo-lithography includes a solvent and a water soluble polymer with a repeating unit represented by chemical formula 1. In chemical formula 1, R1 to R3 are respectively hydrogen atoms or C1-20 linear, branched, or cyclic hydrocarbon groups; if X exists, X is a C1-20 linear, branched, or cyclic hydrocarbon group. The content of the aqueous polymer is in a range between 0.001 and 5 weight%. Remaining amount of the composition is the solvent. |
申请公布号 |
KR20120111532(A) |
申请公布日期 |
2012.10.10 |
申请号 |
KR20110030053 |
申请日期 |
2011.04.01 |
申请人 |
DONGJIN SEMICHEM CO., LTD. |
发明人 |
OH, SEUNG KEUN;LEE, JAE WOO;KIM, JAE HYUN |
分类号 |
G03F7/42;C11D3/37;G03F7/40 |
主分类号 |
G03F7/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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