发明名称 CLEANING COMPOSITION FOR PHOTOLITHOGRAPHY
摘要 PURPOSE: A washing liquid composition for photo-lithography is provided to cure the surface of patterns and to increase the etching resistance of the composition. CONSTITUTION: A washing liquid composition for photo-lithography includes a solvent and a water soluble polymer with a repeating unit represented by chemical formula 1. In chemical formula 1, R1 to R3 are respectively hydrogen atoms or C1-20 linear, branched, or cyclic hydrocarbon groups; if X exists, X is a C1-20 linear, branched, or cyclic hydrocarbon group. The content of the aqueous polymer is in a range between 0.001 and 5 weight%. Remaining amount of the composition is the solvent.
申请公布号 KR20120111532(A) 申请公布日期 2012.10.10
申请号 KR20110030053 申请日期 2011.04.01
申请人 DONGJIN SEMICHEM CO., LTD. 发明人 OH, SEUNG KEUN;LEE, JAE WOO;KIM, JAE HYUN
分类号 G03F7/42;C11D3/37;G03F7/40 主分类号 G03F7/42
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