| 摘要 |
The invention relates to nanoelectronics and capacitor manufacturing and can be used in optoelectronic memory systems, in photoelectric sensors, in light energy convertors, electric energy storages. A nanocomposite photo-capacitor comprises a photosensitive nanocomposite material presenting as a gallium selenide semiconductor matrix of crystalline structure. It comprises arrays of crystalline structure nanosized (3D) ferrielectrics s orderly located along hexagonal symmetry axis of layered crystalline matrix. The surface of inclusions in the basic flat (0001) of layered crystal is more then 10cm, geometrical dimensions canphotocapacitor within aria of low electric frequency (less than 102 Hz). |
