| 摘要 |
<p>A method is described for manufacturing a semiconductor device, comprising the steps of providing a substrate (1), providing a first epitaxial semiconducting layer (3) on top of the substrate (1), and forming a one- or two-dimensional repetitive pattern, each part of the pattern having an aspect ratio in the range 0,1 to 50. A corresponding semiconductor device, electronic circuit and apparatus is also disclosed.</p> |
