| 摘要 |
PURPOSE: A power semiconductor device having a trench gate structure is provided to improve short circuit properties by limiting the maximum value of current flowing in short circuit condition. CONSTITUTION: A plurality of trench gate structures is formed on an active area. A first conductive well(30) is formed between the trench gate structures separated at a first mesa width(M1). The first conductive well has a first depth. A first conductive deep well(500) is formed between the trench gate structures separated at a second mesa width(M2). The first conductive deep well has a second depth deeper than the first depth.
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