| 摘要 |
FIELD: metallurgy. ^ SUBSTANCE: method includes placement of a substrate in a vacuum chamber, ion etching of a substrate and deposition of a material onto a substrate by PVD method in a medium of working gas. For deposition at least two electric arc plasma sources are used with flow separation, besides, at least one of them is equipped with a cathode of refractory metal. At the same time a pulse gas discharge is generated in a vacuum chamber, and during material deposition the substrate is moved between plasma sources, and the working gas contains a mixture of chemically active and inert gases. The device for method realisation comprises a vacuum chamber with a vertical axis, a plasma PVD source, an electrically conducting substrate holder fixed on a displacement mechanism, a high-voltage source of supply joined by one pole with a holder, and by the other one with the vacuum chamber body, and a system of working gas supply to the vacuum chamber. At the same time the plasma source in the PVD device is represented by at least two electric arc sources of plasma with flow separation, installed on side surfaces of the vacuum chamber and directed at its vertical axis. The displacement mechanism is installed as capable of substrate holder movement along the circumference with an axis matching the axis of the vacuum chamber. ^ EFFECT: improved quality of coatings. ^ 12 cl |
