发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film. |
申请公布号 |
EP2507823(A1) |
申请公布日期 |
2012.10.10 |
申请号 |
EP20100834489 |
申请日期 |
2010.11.15 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO. LTD. |
发明人 |
YAMAZAKI, SHUNPEI;SAKATA, JUNICHIRO;OHARA, HIROKI |
分类号 |
G02F1/1368;H01L21/20;H01L21/28;H01L21/324;H01L29/66;H01L29/786 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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