SMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: A semiconductor device for high integration and a manufacturing method thereof are provided to have high reliability by preventing the recess of a first element isolation pattern including a first insulating pattern made of nitride. CONSTITUTION: A first insulating pattern(132) is made of silicon nitride. A second liner pattern(124) covers a sidewall and a bottom surface of a second trench(114). The second liner pattern is made of same material as a first liner pattern. A second insulating pattern(144) is contacted to the second liner pattern. The second insulating pattern is made of different material as the first insulating pattern.