| 摘要 |
<p>A method of manufacturing an electronic device comprises: providing a layer of semiconductor material 3 comprising a first portion, a second portion, and a third portion; the third portion connecting the first portion to the second portion and providing a semiconductive channel 21 for electrical current flow between the first and second portions; providing a gate terminal 11 arranged with respect to said third portion such that a voltage may be applied to the gate terminal 11 to control an electrical conductivity of said channel 21; and processing at least one of the first and second portions so as to have an electrical conductivity greater than an electrical conductivity of the channel when no voltage is applied to the gate terminal 11. The method may include providing a gate terminal by covering the layer of semiconductor 3 with a resist 7(71,72), forming a window in the resist 7 to expose the third portion; depositing a conductive material layer 11 in the window and removing the remaining resist material 7. The window may be formed in a depression formed in the resist 7 surface, the depression may be formed using an imprinting tool. The present method relates to producing aligned thin film transistor terminals using cheap printing techniques.</p> |
