发明名称 |
Body contacted transistor with reduced parasitic capacitance |
摘要 |
<p>A body contacted semiconductor-on-insulator (SOI) metal gate containing transistor that has a reduced parasitic gate capacitance is provided in which a metal portion of a gate stack (26) is removed over the body contact region and a silicon-containing material is formed that contacts the gate dielectric (28) in the body contact region (24) of an SOI substrate (12). This causes an increase of the effective gate dielectric thickness on the body contact region by greater than 5 angstroms (A). This results in a lower parasitic capacitance at the body contact region.</p> |
申请公布号 |
GB2489882(A) |
申请公布日期 |
2012.10.10 |
申请号 |
GB20120013597 |
申请日期 |
2010.12.14 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ANTONIO L.P ROTONDARO |
分类号 |
H01L29/423 |
主分类号 |
H01L29/423 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|