PURPOSE: An image sensor is provided to minimize the reduction of quantum efficiency by including a back side protective pattern only on a lower area of a semiconductor substrate. CONSTITUTION: A plurality of photo-sensing elements(115) is formed on the upper area of a semiconductor substrate(110) and a plurality of active areas(RA). The photo-sensing elements respectively generate an electrical signal corresponding to incident light. A back side protective pattern(135) is partially formed on the lower area of the semiconductor substrate and a peripheral area(RP) surrounding the active areas. The peripheral area has a grid shape.
