发明名称 MEMORY AND MEMORY READING METHOD
摘要 <p>PURPOSE: A memory and a memory reading method are provided to instantly output data after a read command and an address are inputted when a memory including a NAND cell array is read using a serial peripheral interface. CONSTITUTION: A block address, a word-line address, and a bit-line address of a NAND cell array(400) are successively inputted. Data written in the NAND cell array is outputted after the input of the bit-line address is completed. An input process is performed using one input terminal. The word lines which belong to the block corresponding to the block address is driven before the input of the bit-line is completed.</p>
申请公布号 KR20120111713(A) 申请公布日期 2012.10.10
申请号 KR20110030375 申请日期 2011.04.01
申请人 ATO SOLUTION CO., LTD. 发明人 HWANG, TAE SUN;PARK, IN SUN
分类号 G11C16/26;G11C16/08 主分类号 G11C16/26
代理机构 代理人
主权项
地址