| 摘要 |
PURPOSE: A Schmitt trigger circuit is provided to reduce a capacitance portion of an output terminal by using a diode connection of a MOS(Metal Oxide Semiconductor) transistor. CONSTITUTION: A first inverter(100) inverts an input voltage. A second inverter(200) generates an output voltage by inverting the output of the first inverter. A first p type transistor(MP1) includes a first source electrode connected to a first node, a first gate electrode, and a first drain electrode. A second p type transistor(MP2) comprises a second gate electrode, a second source electrode, and a second drain electrode connected to the first node. A first n type transistor(MN1) comprises a gate electrode, a source electrode connected to the second node, and a drain electrode connected to the second node. A second n type transistor(MN2) comprises a fourth gate electrode, a fourth source electrode, a fourth drain electrode connected to the second node. |
