SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND ELECTRONIC DEVICE INCLUDING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A semiconductor device, a manufacturing method thereof and an electronic device including the semiconductor device are provided to increase the on/off ratio of a transistor by applying a patterned graphene layer as a unit layer. CONSTITUTION: A semiconductor element includes a plurality of unit layers(L1-L4) separated in the vertical direction. The semiconductor element is used as a channel layer. An insulating layer(IN1-IN3) is formed between the unit layers. The unit layer respectively includes a graphene layer. The patterned graphene layer has a nano mesh structure.