THREE DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME

摘要

PURPOSE: A 3D semiconductor memory device and manufacturing method thereof are provided to prevent the resistance of an electrode by minimizing the etching loss of the highest electrode. CONSTITUTION: An electrode structure includes stacked electrodes and an insulating pattern. A work electrode includes a first outer sidewall and a second outer sidewall facing each other. A vertical active pattern(120) passes through the electrode structure. An electrode dielectric layer(170) is interposed between each electrode. The electrode dielectric layer is located between the sidewalls of the vertical active pattern.