Magnetic random access memory and operating method of the same

摘要

A MRAM includes: first and second bit lines provided to extend in a first direction; a storage block including at least one magnetroresistive element for storing data; and a reading circuit. The reading circuit includes a first terminal electrically connected to the first bit line, and a second terminal electrically connected to the second bit line. The second terminal has a high impedance preventing a steady-state current from flowing into at a time of a reading operation. The reading circuit supplies a reading current from the first terminal to the first bit line at the time of the reading operation. The storage block is configured such that the reading current flows from the first bit line to the magnetroresistive element and the magnetroresistive element is connected to the second bit line at the time of the reading operation. The reading circuit controls the reading current on the basis of a voltage applied to the second terminal through the second bit line.