发明名称 |
Process for selectively depositing copper thin films on substrates with copper and ruthenium areas via vapor deposition |
摘要 |
A process for preparing a multi-layer substrate is described herein. In one embodiment, the process provides a multi-layer substrate comprising a first layer and a second layer where the process comprises the steps of providing the first layer comprising a barrier area and a copper area; and depositing the second layer comprising copper onto the first layer wherein the depositing provides the second layer comprising a first thickness ranging from about 20 Angstroms to about 2,000 Angstroms onto the barrier area and a second thickness ranging from about 0 Angstroms to about 1,000 Angstroms onto the copper area in the first layer wherein the first thickness is greater than the second thickness. |
申请公布号 |
US8283485(B2) |
申请公布日期 |
2012.10.09 |
申请号 |
US20080139585 |
申请日期 |
2008.06.16 |
申请人 |
NORMAN JOHN ANTHONY THOMAS;AIR PRODUCTS AND CHEMICALS, INC. |
发明人 |
NORMAN JOHN ANTHONY THOMAS |
分类号 |
H01L21/443 |
主分类号 |
H01L21/443 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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