| 摘要 |
PURPOSE: A field effect transistor is provided to reduce leakage current by forming junction of low doping concentration. CONSTITUTION: A source region(14a) and a drain region(14b) are separately formed on a semiconductor layer(2). A gate insulating layer(8) is formed on a part of the semiconductor layer placed between the source region and the drain region. A gate electrode(10) is formed on the gate insulating layer. A gate sidewall(12) is formed on one side among sides of the gate electrode. The source region and the drain region are separately arranged from a side corresponding to the gate electrode. A source electrode and a drain electrode containing intemetallic compounds are respectively formed in the source region and the drain region. |
