METHOD FOR MANUFACTURING SINGLE CRYSTAL INGOT AND SINGLE CRYSTAL INGOT, WAFER MANUFACTURED BY THE SAME

摘要

PURPOSE: A method for manufacturing a single crystalline ingot, and the single crystalline ingot and a wafer manufactured thereby are provided to make the single crystalline ingot and the wafer of high quality grow by controlling RRG(Radial Resistivity Gradient) within 5%. CONSTITUTION: A first area(110) has a resistance value within 0.0001Ω-cm with a center. A second area(120) has a resistance value higher than the first area as 0.0001Ω-cm. A third area(130) has a resistance value higher than the second area as 0.0001Ω-cm. A fourth area(140) has a resistance value higher than the third area. The uniformity inside a cross section of a single crystalline ingot is controlled within 3%. The interface of the single crystalline ingot and silicon ablative corrosion is controlled to 3 to 10mm.