| 摘要 |
A silicon light-emitting element includes a first conductivity type silicon substrate 10 having a first surface 10a and a second surface 10b on a side opposite to the first surface 10a, an insulating film 11 provided on the first surface 10a of the silicon substrate 10, a silicon layer 12 provided on the insulating film 11, and having a second conductivity type different from the first conductivity type, a first electrode 13 provided on the silicon layer 12, and a second electrode 14 provided on the second surface of the silicon substrate, and the silicon substrate 10 has a carrier concentration of 5×1015cm−3 to 5×1018cm−3, the silicon layer 12 has a carrier concentration of 1×1017cm−3 to 5×1019cm−3, and that is larger by one digit or more than the carrier concentration of the silicon substrate 10, and the insulating film 11 has a film thickness of 0.3 nm to 5 nm. Accordingly, a silicon light-emitting element that is applicable to a silicon photonics light source is realized. |
