发明名称 3-dimensional device design layout
摘要 A method for defining a layout of 3-D devices, such as a finFET, is provided. The method includes determining an area required by a desired 3-D device and designing a circuit using planar devices having an equivalent area. The planar device corresponding to the desired 3-D device is used to layout a circuit design, thereby allowing circuit and layout designers to work at a higher level without the need to specify each individual fin or 3-D structure. Thereafter, the planar design may be converted to a 3-D design by replacing planar active areas with 3-D devices occupying an equivalent area.
申请公布号 US8286114(B2) 申请公布日期 2012.10.09
申请号 US20070833119 申请日期 2007.08.02
申请人 CHUANG HARRY;THEI KONG-BENG;LIANG MONG SONG;CHUNG SHENG-CHEN;YAO CHIH-TSUNG;KAO JUNG-HUI;CHENG CHUNG LONG;SHEN GARY;CHANG GWAN SIN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 CHUANG HARRY;THEI KONG-BENG;LIANG MONG SONG;CHUNG SHENG-CHEN;YAO CHIH-TSUNG;KAO JUNG-HUI;CHENG CHUNG LONG;SHEN GARY;CHANG GWAN SIN
分类号 G06F17/50 主分类号 G06F17/50
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