发明名称 |
Radical oxidation process for fabricating a nonvolatile charge trap memory device |
摘要 |
A method for fabricating a nonvolatile charge trap memory device is described. The method includes providing a substrate having a charge-trapping layer disposed Thereon. A portion of the charge-trapping layer is then oxidized to form a blocking dielectric layer above the charge-trapping layer by exposing the charge-trapping layer to a radical oxidation process. |
申请公布号 |
US8283261(B2) |
申请公布日期 |
2012.10.09 |
申请号 |
US20080124855 |
申请日期 |
2008.05.21 |
申请人 |
RAMKUMAR KRISHNASWAMY;CYPRESS SEMICONDUCTOR CORPORATION |
发明人 |
RAMKUMAR KRISHNASWAMY |
分类号 |
H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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