发明名称 Photoresist processing methods
摘要 A photoresist processing method includes treating a substrate with a sulfur-containing substance. A positive-tone photoresist is applied on and in contact with the treated substrate. The method includes selectively exposing a portion of the photoresist to actinic energy and developing the photoresist to remove the exposed portion and to form a photoresist pattern on the substrate. The treating with a sulfur-containing substance reduces an amount of residual photoresist intended for removal compared to an amount of residual photoresist that remains without the treating.
申请公布号 US8283112(B2) 申请公布日期 2012.10.09
申请号 US201113163515 申请日期 2011.06.17
申请人 TOREK KEVIN J.;ABBOTT TODD R.;TAGG SANDRA;WEATHERLY AMY;MICRON TECHNOLOGY, INC. 发明人 TOREK KEVIN J.;ABBOTT TODD R.;TAGG SANDRA;WEATHERLY AMY
分类号 G03F7/26;G03F7/38 主分类号 G03F7/26
代理机构 代理人
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